| PART |
Description |
Maker |
| HCC40107BDG HCC4017BDG HCC4017BDT HCC4027BDG HCC40 |
Rad-hard dual 2-input NAND buffer/driver
Rad-hard decade counter/divider
Rad-hard dual J-K master-slave Flip-Flop
Rad-hard triple 3-input NAND gate
Rad-hard 4-bit magnitude comparator
Rad-hard triple 3-input AND gate
Rad-hard hex buffer 3-state non-inverter
Rad-hard hex schmitt trigger
Rad-hard hex inverting buffer/converter
Rad-hard hex inverter
|
ST Microelectronics
|
| BWR12/830D12 BWR12/830D48 BWR9/850D5 BWR12/625D5 |
Rad-hard 8-channel multiplexer (3-state)
Rad-hard dual 4 channel multiplexer 3 state output
Rad-hard octal D-type latch with 3 state output non inverting
Rad-hard octal bus transceiver with 3 state outputs (non inverted) 模拟IC
|
STMicroelectronics N.V.
|
| AT68166F-YM20-E AT68166F-YM20-SCC AT68166F-YS18-MQ |
Rad Hard 16 MegaBit 3.3V SRAM MultiChip Module
|
ATMEL Corporation
|
| AT68166H-YM20-E AT68166H-YM20-SCC AT68166H-YM20MQ |
Rad Hard 16 MegaBit 3.3V SRAM Multi-Chip Module
|
ATMEL Corporation
|
| 930105201 5962-0520801QXC 5962-0520801QYC 5962-052 |
Rad Hard 512K x 8 5V Tolerant Very Low Power CMOS SRAM
|
ATMEL Corporation
|
| GS81332QT19CE-250M GS81332QT19CE-350M GS81332QT37C |
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II 1.8
Rad-Hard SRAM 288Mb/144Mb/72Mb Burst of 2 SigmaQuad-II TM
|
GSI Technology
|
| HS-22620RH HS-2620RH HS-2622RH |
Op Amp, Dual, Wideband, High Input Impedance Uncompensated, 100MHz, 20V/s, Rad-Hard
Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 500MΩ Input Impedance
Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 65MΩ Input Impedance
|
Intersil
|
| IRHF7310SE |
N-Channel Single Event Effect (SEE) Rad Hard HEXFET Transistor(N 沟道 单事件效Rad Hard HEXFET技术晶体管)
|
International Rectifier
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSS430R4 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 3A00V.70欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
http://
|
| CY7C1475V33-133BGXI CY7C1475V33-133BGI CY7C1475V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 8.5 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBLArchitecture 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构B>72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM)
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL?/a> Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL垄芒 Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| JANSR2N7402 FN4374 |
3A, 500V, 2.70 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
3A, 500V, 2.70 Ohm, Rad Hard, Channel Power MOSFET
3A/ 500V/ 2.70 Ohm/ Rad Hard/ N-Channel Power MOSFET
3 A, 500 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
|
